Samsung unveils 1st 20-nm high performance mobile DRAM

Samsung has announced that it has begun mass production of its 6GB low-power double data rate 3 (LPDDR3) mobile DRAM, based on advanced 20 nanometer (nm) processor technology.

This new mobile memory chip will enable longer battery run-time and faster application loading on large screen mobile devices with high resolution.

“Our new 20nm 6Gb LPDDR3 DRAM provides the most advanced mobile memory solution for the rapidly expanding high-performance mobile DRAM market,” said Jeeho Baek, vice president, memory marketing, Samsung.

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Samsung’s new 6GB LPDDR3 has a data transfer rate of up to 2,133 Mbps. A 3GB LPDDR3 package, which consists of four 6GB LPDDR3 chips, can be easily created for use in a wide range of mobile devices.

The 3GB package is 20 percent smaller and consumes about 10 percent less energy than the currently available 3GB package with 6Gb LPDDR3 chips fabricated using Samsung’s previous low process technology.

The new package uses Samsung’s new 20 nanometer process which brings more than 30 percent productivity gain, compared to the previous process.

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Samsung first used 20 nanometer technology on 4Gb DDR3 for PCs and has now expanded its use to include the company’s mobile DRAM.

Samsung says it will continue to offer more advanced 20nm mobile DRAM products to further strengthen its product line-up and maintain its leadership in the crowded mobile DRAM market, as the market expands with more feature rich flagship smartphones, high-end tablets and wearable devices.


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