South Korean vendor Samsung has announced its new 28MP APS-C CMOS image sensor for digital cameras, S5KVB2.
The new image sensor will be showcased at Photokina 2014 held in Cologne, Germany, along with the new compact system camera.
The new S5KVB2 uses Samsung’s BSI technology and provides optimum light absorption. The imager utilizes 65-nanometer low-power copper process for power efficiency and noiseless high quality imaging in high-end compact system camera formats.
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“To satisfy the increasing market need for high-end image sensors in digital cameras, Samsung has introduced this new imager, which features excellent higher resolution, superior image quality, and faster shooting speed with low power consumption,” said Kyushik Hong, vice president of System LSI marketing, Samsung.
The new S5KVB2 is the industry’s first APS-C sensor to adopt back-side illuminated (BSI) pixel technology.
To reduce the loss of light, the BSI structure moves the metal layers to the rear side of the photodiode.
S5KVB2 improves the light sensitivity of each pixel and increases light absorption in peripheral areas by approximately 30 percent which results in crisper, sharper images compared to a conventional front-side illumination (FSI) pixel-based imager.
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The imager’s metal wiring can be optimized for continuous speed by moving the position of the photo diode.
The new image sensor can shoot up to 30 fps videos, recording at Ultra HD resolution.
The feature that makes the image sensor stand out is Samsung’s advanced 65nm low-power copper process, which is way ahead of 180nm aluminum process, generally used in the camera sensor industry.
The S5KVB2 image sensor has less thermal emissions because the 65nm copper process enables power consumption to be reduced compared to an image sensor based on a previous process technology.
The image sensor is based on the finer ICs and the use of copper. Through the advanced fabrication process and IC design, the S5KVB2 also decreases random noise significantly.