Qualcomm has announced the next-generation of fast charging technology with Qualcomm Quick Charge 3.0 technology.
It is the first to employ Intelligent Negotiation for Optimum Voltage (INOV), a new algorithm developed by Qualcomm Technologies, designed to allow portable devices the ability to determine what power level to request at any point in time for optimum power transfer.
Quick Charge 3.0 can charge a typical phone from zero to 80 percent in about 35 minutes.
Quick Charge 3.0 is designed to be up to 38 percent more efficient than Quick Charge 2.0. It can Charge up to 2 times faster than Quick Charge 1.0.
When used with Qualcomm Technologies’ latest, advanced parallel charging configurations, Quick Charge 3.0 can improve fast charging up to 27% or reduces power dissipation by up to 45% when compared to Quick Charge 2.0.
Quick Charge 3.0 will be featured as an option on select Qualcomm Snapdragon processors, including Snapdragon 820, 620, 618, 617 and 430, and is expected to appear in mobile devices launched next year.
Other improvements include enhanced flexibility over Quick Charge 2.0, notably in terms of charging options. While Quick Charge 2.0 offers four charging voltages at 5V, 9V, 12V and 20V, Quick Charge 3.0 provides flexibility with 200mV increments from 3.6V to 20V.
Quick Charge 3.0 also maintains forward and backward compatibility with previous versions of Quick Charge as well as with connectors, including USB Type-C, as well as the same ultra-fast charging speed, cable independence offering OEMs several options, and UL certification.