Samsung announces the production of industry’s first 128-gigabyte (GB) embedded memory based on the Universal Flash Storage (UFS) 2.0 standard for next generation flagship smartphones.
“With our mass production of UFS memory of the industry’s highest capacity, we are making a significant contribution to enable a more advanced mobile experience for consumers,” said Jee ho Baek, senior vice president of memory marketing, Samsung Electronics.
Command Queue technology is used by the UFS memory, to accelerate the speed of command execution in SSDs through a serial interface such that data processing speeds increases compared to the 8-bit parallel interface base Embedded MultiMediaCard (eMMC) standard.
Samsung UFS memory is 2.7 times faster than the most common embedded memory in conducting input/output operations per second for random reading. It conducts 19,000 input/output operations per second. Energy consumption is reduced by 50 percent and it also delivers a sequential read and write performance to boost up to SSD levels.
The random read speed is 12 times faster than that of a typical high speed memory card and is expected is improve system performance.
UFS is capable of supporting seamless Ultra HD video playback and smooth multitasking functions at the same time as for random writing storage UFS embedded memory operates at 14,000 IOPS and is 28 times fast as a conventional external memory card.
Samsung says that its UFS will support high end mobile market needs and eMMM solutions will support mid market, value segments as Samsung’s new UFS embedded memory is available in 128GB, 64GB and 32GB versions which are twice the capacity of its eMMC line up.
To provide more design flexibility to global customers, Samsung’s UFS embedded memory package can be stacked directly on top of a logic chip, taking approximately 50 percent less space.